YouGou Electronics

Transistor GT35J321

GT35J321 Transistor

GT35J321 Transistor

5 of 5

Summery

Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT35J321

CategoryTransistor
BrandToshiba
Datasheet DataSheet

Quantity

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GT35J321 Transistor Attributes

  • Collector−emitter voltage 600 V
  • Gate−emitter voltage ±25 v
  • Collector current (pulse) 100 A
  • Junction temperature 150 °C
  • Storage temperature range −55 to 150 °C

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