YouGou Electronics

IPW60R041P6 MOSFET transistor

IPW60R041P6 MOSFET transistor

IPW60R041P6 MOSFET transistor

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Summery

IPW60R041P6 is a high quality MOSFET transistor. Submit an inquiry to buy this MOSFET transistor directly from China, with no intermediary at the cheapest price and valid warranty.

CategoryTransistor
BrandCHINA-MARKET
Datasheet DataSheet

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IPW60R041P6 MOSFET transistor Attributes

  • Package/Case TO-247-3
  • Vds - Drain-Source Breakdown Voltage 600 V
  • Id - Continuous Drain Current 77.5 A
  • Rds On - Drain-Source Resistance 37 mOhms
  • Vgs - Gate-Source Voltage -20 to +20 V
  • Vgs th - Gate-Source Threshold Voltage 3.5 V
  • Qg - Gate Charge 170 nC
  • Minimum Operating Temperature -55 C
  • Maximum Operating Temperature +150 C
  • Pd - Power Dissipation 481 W
  • Fall Time 5 ns
  • Height 21.1 mm
  • Length 16.13 mm
  • Rise Time 27 ns
  • Factory Pack Quantity 240
  • Unit Weight 6 g

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