YouGou Electronics

MOSFET IPW60R099P6

IPW60R099P6 MOSFET
IPW60R099P6 MOSFET

IPW60R099P6 MOSFET

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Summery

MOSFETIPW60R099P6

CategoryTransistor
BrandInfineon Technologies
Datasheet DataSheet

Quantity

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IPW60R099P6 MOSFET Attributes

  • Maximum Operating Temperature + 150 C
  • Minimum Operating Temperature - 55 C
  • Vds - Drain-Source Breakdown Voltage 600 V
  • Height 21.1 mm
  • Length 16.13 mm
  • Width 5.21 mm
  • Vgs - Gate-Source Voltage - 20 , + 20 V
  • Typical Turn-On Delay Time 20 ns
  • Technology Si
  • Mounting Style Through Hole
  • Transistor Polarity N-Channel
  • Number of Channels 1 Channel
  • Id - Continuous Drain Current 37.9 A
  • Rds On - Drain-Source Resistance 99 mOhms
  • Vgs th - Gate-Source Threshold Voltage 3.5 V
  • Qg - Gate Charge 70 nC
  • Pd - Power Dissipation 278 W
  • Fall Time 5 ns
  • Rise Time 10 ns
  • Factory Pack Quantity 30
  • Typical Turn-Off Delay Time 50 ns
  • Unit Weight 0.211644 oz

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