YouGou Electronics

MOSFET TK39N60W

TK39N60W MOSFET
TK39N60W MOSFET

TK39N60W MOSFET

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Summery

MOSFET TK39N60W

CategoryTransistor
BrandToshiba
Datasheet DataSheet

Quantity

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MOSFET TK39N60W

TK39N60W MOSFET Attributes

  • Package / Case TO-247-3
  • Maximum Operating Temperature + 150 C
  • Mounting Style Through Hole
  • Minimum Operating Temperature - 55 C
  • Height 20.95 mm
  • Length 15.94 mm
  • Width 5.02 mm
  • Unit Weight: 0.211644 oz
  • Product Type MOSFET
  • Technology Si
  • Transistor Polarity N-Channel
  • Number of Channels 1 Channel
  • Vds - Drain-Source Breakdown Voltage 600 V
  • Id - Continuous Drain Current 38.8 A
  • Rds On - Drain-Source Resistance 55 mOhms
  • Vgs - Gate-Source Voltage - 30 , + 30 V
  • Vgs th - Gate-Source Threshold Voltage 3.7 V
  • Qg - Gate Charge 110 nC
  • Pd - Power Dissipation 270 W
  • Channel Mode Enhancement
  • Tradename DTMOSIV
  • Packaging Tube
  • Brand Toshiba
  • Configuration Single
  • Fall Time 9 ns
  • Rise Time 50 ns
  • Series TK39N60W
  • Factory Pack Quantity 30
  • Subcategory MOSFETs
  • Transistor Type 1 N-Channel
  • Typical Turn-Off Delay Time 200 ns
  • Typical Turn-On Delay Time 80 ns

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