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IGBT Modules BSM25GD120DN2

BSM25GD120DN2 IGBT Module
BSM25GD120DN2 IGBT Module

BSM25GD120DN2 IGBT Module

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Summery

IGBT Modules BSM25GD120DN2

BrandInfineon Technologies
Datasheet DataSheet

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IGBT Modules BSM25GD120DN2

BSM25GD120DN2 IGBT Module Attributes

  • Maximum Operating Temperature + 150 C
  • Collector- Emitter Voltage VCEO Max 1200 V
  • Collector-Emitter Saturation Voltage 2.5 V
  • Height 17 mm
  • Maximum Gate Emitter Voltage 20 V
  • Minimum Operating Temperature - 40 C
  • Continuous Collector Current at 25 C 35 A
  • Gate-Emitter Leakage Current 180 nA
  • Pd - Power Dissipation 200 W
  • Package / Case EconoPACK 2A
  • Packaging Tray
  • Length 107.5 mm
  • Width 45 mm
  • Factory Pack Quantity 10
  • Technology Si
  • Unit Weight 180 g

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