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IGBT Modules FP75R12KT4

FP75R12KT4 IGBT Module

FP75R12KT4 IGBT Module

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Summery

IGBT Modules FP75R12KT4

CategoryIGBT Module
BrandInfineon Technologies
Datasheet DataSheet

Quantity

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IGBT Modules FP75R12KT4

FP75R12KT4 IGBT Module Attributes

  • Maximum Operating Temperature + 150 C
  • Collector- Emitter Voltage VCEO Max 1200 V
  • Maximum Gate Emitter Voltage 20 V
  • Minimum Operating Temperature - 40 C
  • Unit Weight 10.582189 oz
  • Configuration 3-Phase
  • Collector-Emitter Saturation Voltage 2.25 V
  • Continuous Collector Current at 25 C 150 A
  • Gate-Emitter Leakage Current 100 nA
  • Pd - Power Dissipation 385 W
  • Package / Case Econo 3
  • Packaging Tray
  • Series Trenchstop IGBT4 - T4
  • Factory Pack Quantity 10
  • Technology Si

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