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IGBT Modules FP75R12KT3

FP75R12KT3 IGBT Module
FP75R12KT3 IGBT Module

FP75R12KT3 IGBT Module

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Summery

IGBT Modules FP75R12KT3

BrandInfineon Technologies
Datasheet DataSheet

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IGBT Modules FP75R12KT3

FP75R12KT3 IGBT Module Attributes

  • Maximum Operating Temperature + 125 C
  • Collector- Emitter Voltage VCEO Max 1200 V
  • Height 17 mm
  • Length 122 mm
  • Width 62 mm
  • Maximum Gate Emitter Voltage 20 V
  • Gate-Emitter Leakage Current 400 nA
  • Collector-Emitter Saturation Voltage 2.15 V
  • Continuous Collector Current at 25 C 105 A
  • Pd - Power Dissipation 355 W
  • Package / Case Econo 3
  • Packaging Tray
  • Series Trenchstop IGBT3 - T3
  • Factory Pack Quantity 10
  • Technology Si
  • Unit Weight 300 g

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