YouGou Electronics

IGBT Transistors GT40WR21

GT40WR21 IGBT Transistor

GT40WR21 IGBT Transistor

5 of 5

Summery

IGBT Transistors LOW SATURATION/FAST SWITCHING

BrandToshiba
Datasheet DataSheet

Quantity

+
-

GT40WR21 IGBT Transistor Attributes

  • Minimum Operating Temperature - 55 C
  • Maximum Operating Temperature + 175 C
  • Gate-Emitter Leakage Current 100 nA
  • Package / Case TO-3PN-3
  • Mounting Style Through Hole
  • Configuration Single
  • Collector- Emitter Voltage VCEO Max 1800 V
  • Collector-Emitter Saturation Voltage 2.9 V
  • Maximum Gate Emitter Voltage 25 V
  • Continuous Collector Current at 25 C 40 A
  • Pd - Power Dissipation 375 W
  • Packaging Tray
  • Continuous Collector Current Ic Max 80 A
  • Factory Pack Quantity 100

Customer Reviews

Of5
Share your thoughts with other customers

Write Your Review

this field id required
this field id required
this field id required
this field id required

Need GT40WR21 IGBT Transistor Supplier in China?

Cooperation with China manufacturers has made YouGou Electronics one of the best IGBT Transistor suppliers in China. If you need to buy GT40WR21 IGBT Transistor from main manufacturers at the wholesale price, submit the form bellow.

this field id required
this field id required