YouGou Electronics

IGBT Transistors FGA40N65SMD

FGA40N65SMD IGBT Transistor

FGA40N65SMD IGBT Transistor

5 of 5

Summery

IGBT Field Stop 650 V 80 A 349 W Through Hole TO-3PN

Brandonsemi
Datasheet DataSheet

Quantity

+
-

FGA40N65SMD IGBT Transistor Attributes

  • Collector-Emitter Saturation Voltage 2.5 V
  • Maximum Gate Emitter Voltage 20 V
  • Gate-Emitter Leakage Current 400 nA
  • Technology Si
  • Package / Case TO-3PN
  • Collector- Emitter Voltage VCEO Max 650 V
  • Continuous Collector Current at 25 C 80 A
  • Pd - Power Dissipation 349 W
  • Series FGA40N65SMD
  • Packaging Tube
  • Factory Pack Quantity 450
  • Unit Weight 6.401 g

Customer Reviews

Of5
Share your thoughts with other customers

Write Your Review

this field id required
this field id required
this field id required
this field id required

Need FGA40N65SMD IGBT Transistor Supplier in China?

Cooperation with China manufacturers has made YouGou Electronics one of the best IGBT Transistor suppliers in China. If you need to buy FGA40N65SMD IGBT Transistor from main manufacturers at the wholesale price, submit the form bellow.

this field id required
this field id required